August 23, 2021 – Mouser Electronics, a distributor of Electronic components focused on introducing new products and offering massive inventory, is now stocking Qorvo High Electron Mobility Transistors (HEMTs). This gallium nitride-on-silicon carbide (GaN-on-SiC) transistor provides excellent performance for cellular base stations and RF applications in 5G Massive MIMO, LTE and WCDMA systems.
The Qorvo QPD0011, available from Mouser Electronics, is an asymmetric dual amplifier packaged in a small 7.0 mm x 6.5 mm DFN package. The QPD0011 features variable input power from 30 W to 60 W, drain voltage of +48 V, 3.3 GHz to . Operating at 6 GHz, with up to 13.3 dB gain, and enabling ultra-efficient signal peak power of up to 90 W in the Doherty design environment.
For ease of development, Mouser also provides a matching QPD0011EVB1 evaluation board. This platform includes an example application circuit to speed up prototyping when combined with existing designs. The QPD0011 is suitable for applications such as macro and micro cell base stations, active antennas, and asymmetric Doherty designs.
The Links: AM80A-300L-120F18 TT 330 N 16 KOF 12M1